拓扑绝缘体薄膜生长与栅电压调控输运特性研究

Growth of topological insulator thin films and gate-controlled electron transport properties

摘要: 文章讨论了三维拓扑绝缘体制备和输运性质研究方面的进展情况.首先介绍了拓扑绝缘体体材料和薄膜的制备，并介绍了文章作者利用分子束外延方法，在硅表面以及高介电常数材料钛酸锶表面生长高质量拓扑绝缘体Bi2Se3薄膜的工作.然后介绍了拓扑绝缘体输运研究的现状，以及文章作者在栅电压调控拓扑绝缘体外延薄膜的化学势和输运性质方面的研究成果.

Abstract: We review the recent progress in the growth and electron transport studies of 3D topological insulators (TIs). The growth of bulk crystal and thin film TIs is discussed, followed by an introduction to our recent work on the growth of Bi2Se3 thin films on Si and high dielectric constant SrTiO3 substrates. In the second part we discuss the current status of the study of TI electron transport properties, and our recent results on the tuning of the chemical potential and transport properties of epitaxial Bi2Se3 thin films on SrTiO3.