Abstract: As the scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) continues towards the 45nm technology node, metal gate electrodes have been used in novel MOSFET devices, improving compatibility with high-k dielectrics and eliminating the effects of gate depletion and boron penetration. This paper reviews recent progress, issues that need to be solved, and future trends in the development of pMOS metal gate electrode materials.