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单壁碳纳米管中的金属-半导体转变与对称性

Metal-to-semiconductor transition and symmetry in single-walled carbon nanotubes

  • 摘要: 报道了最近作者对受压扶手椅形单壁碳纳米管中的金属-半导体转变机理的理论研究.这种转变在两种因素的共同作用下得以发生,即外加压力造成碳纳米管镜像对称破缺,以及被压碳纳米管两侧原子发生成键相互作用.作者还进一步揭示了发生这种转变的普遍机制:只要将单壁碳纳米管中两套原来等价的子晶格变得可以区分(对称性破缺),在费米能附近就会产生能隙.

     

    Abstract: We report our recent theoretical studies on the metal-to-semiconductor transition in squashed armchair single-walled carbon nanotubes. The transition can be achieved by a combined effect of the broken mirror symmetry and bond formation between the flattened faces in the squashed nanotubes. Furthermore, we reveal a general mechanism for this transition, namely the distinguishing of the two original equivalent sublattices in the nanotube (symmetry breaking) that opens an energy gap near the Fermi energy.

     

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