Abstract: Valleytronic materials encode and process information by modulating the valley degrees of freedom, and have great potential for information memory devices of the next generation. The coupling of the valley degrees of freedom with various ferroic order parameters will be of great advantage for nonvolatile memory technology, and can promote the development of both valley physics and multiferroic physics. This paper presents an overview of the valleytronics physical background and enumerates various ferrovalley materials with spontaneous valley polarization. Secondly, magnetoelectric valley coupling of two-dimensional multiferroic materials is summarized, Finally, latest progress of valleytronic applications is introduced, potential applications of multiferroic coupling of two-dimensional ferrovalley materials are outlined.