Abstract: The resistive switching and switchable diode effects in BiFeO₃ heterostructures have been investigated. A self-consistent numerical model, which includes the incomplete screening effect of metal electrodes, has been developed to reveal the mechanism of the switchable diode behavior in metal-ferroelectric-metal structures. Experimental studies have been conducted on the effect of the BiFeO₃ film thickness on the electric and magnetic properties of the BiFeO₃/La_0.7Sr_0.3MnO₃ heterostructure, as well as the resistive switching effect and photoelectric behavior in Au/BiFeO₃/La_0.7Sr_0.3MnO₃/SrTiO₃ heterostructures under electro-photo dual modulation. Our results should open a way for potential applications through combining multiple degrees of freedom in devices.